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參數(shù)資料
| 型號： | BUZ905DP |
| 英文描述： | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| 中文描述： | P溝道功率MOSFET為音頻應(yīng)用性（P溝道功率型馬鞍山場效應(yīng)管（用于音頻電路）） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | BUZ905DP |
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
BUZ905DP
BUZ906DP
V
DSX
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
±14V
-16A
-16A
250W
–55 to 150°C
150°C
0.5°C/W
MECHANICAL DATA
Dimensions in mm
1
2
3
0.6
2.8
5.0
20.0
5.45
5.45
1.2
2.0
3.4
2.0
1.0
3.3 Dia.
P–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
P–CHANNEL POWER MOSFET
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (160V & 200V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODE
N–CHANNEL ALSO AVAILABLE AS
BUZ900DP & BUZ901DP
DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ905DP
-160V
BUZ906DP
-200V
TO–3PBL
Pin 2 – Source
Case is Source
Pin 1 – Gate
Pin 3 – Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUZ906DP | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ905D | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ906D | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ905P | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ906P | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ905P | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-247 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-247 制造商:SEMELAB 功能描述:P CHANNEL MOSFET, -160V, 8A, TO-247; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-160V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:125W ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 160V 8A TO-247 |
| BUZ905P | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-247 |
| BUZ905X4S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NEW PRODUCT UNDER DEVELOPMENT |
| BUZ906 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-3 制造商:SEMELAB 功能描述:P CHANNEL MOSFET, -200V, 8A, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:125W; No. of Pins:2;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 8A TO-3 |
| BUZ906 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 |
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