參數(shù)資料
型號(hào): BUZ80
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
中文描述: N溝道增強(qiáng)模式功率MOS晶體管(不適用溝道增強(qiáng)模式功率MOSFET的)
文件頁(yè)數(shù): 10/10頁(yè)
文件大?。?/td> 200K
代理商: BUZ80
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication aresubject to change withoutnotice. Thispublication supersedes and replacesall information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for use ascriticalcomponents in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSONMicroelectronics -Printedin Italy- All Rights Reserved
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BUZ80/FI
10/10
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUZ80A 功能描述:MOSFET N-CH 800V 3.6A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SIPMOS® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
BUZ80A 制造商:Infineon Technologies AG 功能描述:MOSFET N TO-220 ((NW))
BUZ80AC67078-S1309-A3 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:TRANSISTOR TO 220 MOSFET N KANAL
BUZ80AFI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(197.88 k)
BUZ80F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(196.99 k)