參數(shù)資料
型號: BUT18AF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 6 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: PLASTIC, ISOLATED TO-220, 3 PIN
文件頁數(shù): 5/12頁
文件大小: 69K
代理商: BUT18AF
1999 Jun 11
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
Fig.4 Forward bias SOAR.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
T
mb
< 25
°
C
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
handbook, full pagewidth
MGB922
1
10
1
10
2
10
3
10
4
II
I
VCE (V)
10
10
1
10
2
10
2
10
4
10
3
IC
(A)
DC
ICM max
IC max
BUT18F
BUT18AF
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