參數(shù)資料
型號: BUT18AF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 6 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: PLASTIC, ISOLATED TO-220, 3 PIN
文件頁數(shù): 3/12頁
文件大?。?/td> 69K
代理商: BUT18AF
1999 Jun 11
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Without
heatsink compound.
With
heatsink compound.
ISOLATION CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUT18F
BUT18AF
collector-emitter voltage
BUT18F
BUT18AF
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
V
BE
= 0
850
1000
V
V
V
CEO
open base
65
400
450
4
6
12
3
6
20
33
+150
150
V
V
A
A
A
A
A
W
W
°
C
°
C
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
see Fig.4
see Fig.4
T
h
25
°
C; see Fig.2; note 1
T
h
25
°
C; see Fig.2; note 2
T
stg
T
j
storage temperature
junction temperature
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
isolM
C
isol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
12
1500
V
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage
BUT18F
BUT18AF
collector-emitter saturation voltage
base-emitter saturation voltage
collector-emitter cut-off current
I
C
= 100 mA; I
Boff
= 0;
L = 25 mH; see Figs 3 and 6
400
450
1.5
1.3
1
V
V
V
V
mA
V
CEsat
V
BEsat
I
CES
I
C
= 4 A; I
B
= 800 mA; see Fig.7
I
C
= 4 A; I
B
= 800 mA; see Fig.8
V
CE
= V
CESMmax
; V
BE
= 0;
note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 9 V; I
C
= 0
2
mA
I
EBO
emitter-base cut-off current
10
mA
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