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參數(shù)資料
| 型號(hào)： | BUT211X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | POWERLINE: RP20-S_DF - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x25.4x10.2mm Package- Efficiency to 89% |
| 中文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 57K |
| 代理商： | BUT211X |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope
specially suited for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Inductive fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
MAX.
850
400
5
10
32
2.0
0.1
UNIT
V
V
A
A
W
V
μ
s
T
hs
≤
25 C
I
C
= 3.0 A; I
B
= 0.4 A
I
Con
= 3.0 A; I
Bon
= 0.3 A
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
850
400
5
10
2
4
32
150
150
UNIT
V
V
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heat sink
Junction to ambient
CONDITIONS
TYP.
-
-
MAX.
3.95
55
UNIT
K/W
K/W
in free air
1 2 3
case
b
c
e
March 1996
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUT22B | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22BF | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22C | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22CF | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT230F | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 125V V(BR)CEO | 200A I(C) |
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