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參數(shù)資料
| 型號： | BUT211X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWERLINE: RP20-S_DF - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x25.4x10.2mm Package- Efficiency to 89% |
| 中文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 57K |
| 代理商： | BUT211X |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 9.0 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 3.0 A; I
B
= 0.4 A
I
C
= 3.0 A; I
B
= 0.4 A
I
C
= 1.0 A; V
CE
= 2 V
I
C
= 3.0 A; V
CE
= 2 V
I
C
= 1.0 A; V
CE
= 2 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
10.0
-
mA
V
400
V
CEsat
V
BEsat
h
FE
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
0.8
-
21
11
-
-
-
2.0
1.3
30
-
20
25
30
V
V
13
7.5
13
18
23
Gain bands
2
(Acceptance limits)
1
2
3
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times resistive load
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
Con
= 3.0 A; I
Bon
= 0.3 A; -I
Boff
= 0.6 A
TYP.
MAX.
UNIT
1.5
0.5
2.0
0.8
μ
s
μ
s
Switching times inductive load
I
= 3.0 A; I
Bon
= 0.3 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
1.0
60
1.2
100
μ
s
ns
I
= 3.0 A; I
= 0.3 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
= 100 C
t
s
t
f
Turn-off storage time
Turn-off fall time
1.1
120
1.4
250
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
2
Gain Banding.
Product is divided into 3 gain bands for matching purposes.
The gain band is printed on the device.
All devices within a device rail will be from the same gain band.
However, a box may contain rails from more than one band.
Band quantities are shown on the box label.
It is not possible to order specific gain bands.
March 1996
2
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BUT22B | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22BF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22C | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22CF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT230F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 125V V(BR)CEO | 200A I(C) |
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