參數(shù)資料
型號： BUK7556-30
英文描述： N-Channel Enhancement MOSFET
中文描述： N溝道MOSFET的增強
文件頁數(shù)： 5/15頁
文件大小： 336K
代理商： BUK7556-30
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
5 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
40
36
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 40 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
2
1
3
4
4.4
V
V
V
I
DSS
drain-source leakage current
0.05
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
3.9
4.5
8.5
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-to-source charge
Q
gd
gate-to-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
V
GS
= 10 V; V
DD
= 32 V;
I
D
= 25 A;
Figure 14
117
19
50
4300
1400
800
33
110
151
76
4.5
5730
1680
1100
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 10 V; R
G
= 10
;
from drain lead 6mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404 / SOT226
from source lead to source
bond pad
3.5
nH
2.5
nH
L
s
internal source inductance
7.5
nH
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