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參數(shù)資料
| 型號： | BUK7514-60 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 68A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 68A條（?。﹟ TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 7/15頁 |
| 文件大小： | 336K |
| 代理商： | BUK7514-60 |
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
7 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= V
GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C; V
DS
= 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
-60
1
2
3
4
5
0
60
120
180
(V)
max
min
typ
VGS(th)
Tj (oC)
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
0
2
4
6
max
typ
min
VGS (V)
ID
(A)
03ne62
0
20
40
60
80
100
0
20
40
60
80
ID (A)
gfs
03ne67
0
2000
4000
6000
8000
10
-1
1
10
10
2
VDS (V)
C
(pF)
Ciss
Coss
Crss
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