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參數(shù)資料
| 型號： | BUK7514-60 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 68A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 68A條（?。﹟ TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 336K |
| 代理商： | BUK7514-60 |
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
6 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
V
SD
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 40 A; V
GS
= 0 V;
Figure 15
I
S
= 20 A;dI
S
/dt =
100 A/
μ
s
V
GS
=
10 V; V
DS
= 30 V
0.85
1.2
V
t
rr
Q
r
96
224
ns
nC
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; I
D
= 25 A
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ne65
0
50
100
150
200
250
300
350
400
450
0
2
4
6
8
10
VDS (V)
ID
4.5
5.5
6.5
7.5
VGS (V) =
20
12
10
8.5
9
03ne64
3
4
5
6
5
10
15
20
VGS (V)
RDSon
(m
)
03ne66
0
2
4
6
8
10
0
50
100
150
200
250
300
350
400
ID (A)
RDSon
(m
)
VGS (V) =
10
9
8
7
6
03aa27
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
T
j
(
o
C)
a
a
R
DSon 25 C
)
---------------------------
=
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