參數(shù)資料
型號: BUK7509-75A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 75A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 75V的五(巴西)直| 75A條(?。﹟ TO - 220AB現(xiàn)有
文件頁數(shù): 13/15頁
文件大?。?/td> 336K
代理商: BUK7509-75A
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
13 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
11. Revision history
Table 6:
Rev Date
02
Revision history
CPCN
20011107
Description
Product data; second version; supersedes Rev. 01 of 20011018.
Problem during rendering process leading to m
being shown as
μ
in table 5.
Product data; initial version
-
01
20011018
-
相關(guān)PDF資料
PDF描述
BUK7514-60 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 68A I(D) | TO-220AB
BUK7523-75A TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 53A I(D) | TO-220AB
BUK752R7-30B TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
BUK753R1-40B TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-220AB
BUK7556-30 N-Channel Enhancement MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK7509-75A,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7510-100B 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7510-100B,127 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7510-30 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
BUK7510-55AL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET