參數(shù)資料
型號： BUK7213-40A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 36-PIN FEM CONN PCB RA 1284-C MINI-CEN
中文描述： 55 A, 40 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 7/14頁
文件大?。?/td> 113K
代理商： BUK7213-40A
Philips Semiconductors
BUK7213-40A
TrenchMOS standard level FET
Product data
Rev. 01 — 29 January 2004
7 of 14
9397 750 12486
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; I
D
= 25 A
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
03nk27
0
100
200
300
0
2
4
6
8
10
VDS (V)
ID
(A)
20
label is VGS (V)
18
16
14
12
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
03nk26
8
10
12
14
16
18
5
10
15
20
VGS (V)
RDSon
(m
)
03nk28
8
14
20
26
0
100
200
300
ID (A)
RDSon
(m
)
label is VGS (V)
6
7
8
9
10
20
03aa27
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
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BUK7213-40A,118 功能描述:MOSFET MOSFET N-CH TRENCH 40V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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