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參數(shù)資料
| 型號： | BUK854-800A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor IGBT |
| 中文描述： | 12 A, 800 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 60K |
| 代理商： | BUK854-800A |
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK854-800A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Fast-switching N-channel insulated
gate bipolar power transistor in a
plastic envelope.
The device is intended for use in
motor control, DC/DC and AC/DC
converters, and in general purpose
high frequency switching
applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
CE
I
C
P
tot
V
CEsat
E
off
Collector-emitter voltage
Collector current (DC)
Total power dissipation
Collector-emitter on-state voltage
Turn-off Energy Loss
800
12
85
3.5
0.5
V
A
W
V
mJ
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
CE
Collector-emitter voltage
V
CGR
Collector-gate voltage
±
V
GE
Gate-emitter voltage
I
C
Collector current (DC)
I
C
Collector current (DC)
I
CLM
Collector Current (Clamped
Inductive Load)
I
CM
Collector current (pulsed peak value, T
j
≤
T
jmax.
on-state)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction Temperature
CONDITIONS
-
R
GE
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
j
≤
T
jmax.
V
CL
≤
500 V
MIN.
-5
-
-
-
-
-
MAX.
800
800
30
12
6
20
UNIT
V
V
V
A
A
A
-
30
A
T
mb
= 25 C
-
-
-
85
150
150
W
C
C
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
In free air
TYP.
-
60
MAX.
1.47
-
UNIT
K/W
K/W
1 2 3
tab
c
g
e
October 1994
1
Rev.1.100
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