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參數(shù)資料
| 型號： | BUK7213-40A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 36-PIN FEM CONN PCB RA 1284-C MINI-CEN |
| 中文描述： | 55 A, 40 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 113K |
| 代理商： | BUK7213-40A |
Philips Semiconductors
BUK7213-40A
TrenchMOS standard level FET
Product data
Rev. 01 — 29 January 2004
5 of 14
9397 750 12486
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
40
36
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 40 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
2
1
-
3
-
-
4
-
4.4
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
-
-
10.3
-
13
24.7
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-to-source charge
Q
gd
gate-to-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
V
GS
= 10 V; V
DD
= 32 V;
I
D
= 25 A;
Figure 14
-
-
-
-
-
-
-
-
-
-
-
47
10
20
1684
590
389
16
124
57
68
2.5
-
-
-
2245
708
532
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 10 V; R
G
= 10
measured from drain to centre
of die
measured from source lead to
source bond pad
L
s
internal source inductance
-
7.5
-
nH
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