參數(shù)資料
型號(hào): BUK545-100B
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: PowerMOS transistor Logic level FET
中文描述: 12 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, FULL PACK-3
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 56K
代理商: BUK545-100B
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK545-100A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
2.54
5.08
0.9
0.7
1
2
3
M
0.4
top view
3.5 max
not tinned
4.4
April 1993
6
Rev 1.100
相關(guān)PDF資料
PDF描述
BUK545-60H PowerMOS transistor Logic level FET
BUK551-100A N-Channel Enhancement MOSFET
BUK551-100B N-Channel Enhancement MOSFET
BUK551-60A TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-220AB
BUK551-60B TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-220AB
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