參數(shù)資料
型號(hào): BUK545-60H
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Logic level FET
中文描述: 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 71K
代理商: BUK545-60H
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK545-60H
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in
a plastic full-pack envelope.
The device is intended for use in
Automotive applications, Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
60
21
30
150
38
V
A
W
C
m
V
GS
= 5 V
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
±
V
GSM
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source
voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 k
-
t
p
50
μ
s
MIN.
-
-
-
-
MAX.
60
60
15
20
UNIT
V
V
V
V
I
D
I
D
I
DM
P
tot
T
stg
T
j
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
-
-
-
-
21
13.5
82
30
150
150
A
A
A
W
C
C
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
With heatsink compound
TYP.
-
MAX.
4.17
UNIT
K/W
R
th j-a
55
-
K/W
d
g
s
1 2 3
case
August 1994
1
Rev 1.000
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