參數(shù)資料
型號(hào): BUK545-100B
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Logic level FET
中文描述: 12 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, FULL PACK-3
文件頁數(shù): 4/8頁
文件大?。?/td> 56K
代理商: BUK545-100B
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK545-100A/B
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 13 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
BUK555-100A
VDS / V
50
40
30
20
10
0
3
4
5
7
10
ID / A
VGS / V =
0
20
40
BUK555-100A
ID / A
gfs / S
20
15
10
5
0
0
20
40
BUK555-100A
ID / A
0.5
0.4
0.3
0.2
0.1
0
2.5
3
3.5
4
4.5
5
10
RDS(ON) / Ohm
VGS / V =
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2.0
1.5
1.0
0.5
0
a
0
2
4
6
8
BUK555-100A
VGS / V
50
40
30
20
10
0
ID / A
25
150
Tj / C =
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
2
1
0
max.
typ.
min.
April 1993
4
Rev 1.100
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PDF描述
BUK545-60H PowerMOS transistor Logic level FET
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BUK551-60A TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-220AB
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