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參數(shù)資料
| 型號(hào)： | BUK475-60B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of BUK455-60A/B |
| 中文描述： | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 59K |
| 代理商： | BUK475-60B |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-60A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
November 1996
6
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK475-60H | PowerMOS transistor Isolated version of BUK455-60H |
| BUK483-60A | PowerMOS transistor |
| BUK539-60A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | SOT-93 |
| BUK541-60A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | SOT-186 |
| BUK541-60B | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4.8A I(D) | SOT-186 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK475-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-60H |
| BUK481-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK481-100AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | SOT-223 |
| BUK481-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK481-60AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 1.6A I(D) | SOT-223 |
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