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參數(shù)資料
| 型號(hào)： | BUK475-60B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of BUK455-60A/B |
| 中文描述： | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | BUK475-60B |
Philips Semiconductors
Product specification
PowerMOS transistor
Isolated version of BUK455-60A/B
BUK475-60A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic
full-pack
deviceisintendedforuseinSwitched
Mode
Power
Supplies
motor control, welding, DC/DC and
AC/DCconverters,andinautomotive
and
general
purpose
applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
envelope.
The
BUK475
-60A
60
21
30
150
0.038
-60B
60
20
30
150
0.045
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
A
W
C
(SMPS),
switching
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
MAX.
60
60
30
UNIT
V
V
V
-60A
21
13
84
-60B
20
12.6
80
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
30
150
150
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
4.17
UNIT
K/W
R
th j-a
-
55
-
K/W
1 2 3
case
d
g
s
November 1996
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK475-60H | PowerMOS transistor Isolated version of BUK455-60H |
| BUK483-60A | PowerMOS transistor |
| BUK539-60A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | SOT-93 |
| BUK541-60A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | SOT-186 |
| BUK541-60B | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4.8A I(D) | SOT-186 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK475-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-60H |
| BUK481-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK481-100AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | SOT-223 |
| BUK481-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK481-60AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 1.6A I(D) | SOT-223 |
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