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參數(shù)資料
| 型號： | BUK475-60H |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of BUK455-60H |
| 中文描述： | 24 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 74K |
| 代理商： | BUK475-60H |
Philips Semiconductors
Product specification
PowerMOS transistor
Isolated version of BUK455-60H
BUK475-60H
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plasticfull-packenvelope.Thedevice
is intended for use in Automotive
applications, Switched Mode Power
Supplies (SMPS), motor
welding,
DC/DC
converters, and in general purpose
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
60
22.5
30
150
34
V
A
W
C
m
control,
AC/DC
and
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
-
R
GS
= 20 k
-
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
60
60
30
22.5
14
90
30
150
150
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
TYP.
-
MAX.
4.17
UNIT
K/W
R
th j-a
55
-
K/W
d
g
s
1 2 3
case
November 1996
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK483-60A | PowerMOS transistor |
| BUK539-60A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | SOT-93 |
| BUK541-60A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | SOT-186 |
| BUK541-60B | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4.8A I(D) | SOT-186 |
| BUK542-50A | N-Channel Enhancement MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK481-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK481-100AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | SOT-223 |
| BUK481-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK481-60AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 1.6A I(D) | SOT-223 |
| BUK482-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
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