參數(shù)資料
型號(hào): BUK475-60H
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Isolated version of BUK455-60H
中文描述: 24 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 74K
代理商: BUK475-60H
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-60H
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 10 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 20 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
0
20
40
60
80
100
4
5.5
6.5
9
10
BUK4Y5-60H
VDS / V
ID / A
VGS / V = 8
15
20
5
6
7
0
20
40
60
80
100
0
5
10
15
20
25
30
BUK4Y5-60H
ID / A
gfs / S
Tj / C =
-40
25
150
0
20
40
60
80
100
0
0.05
0.1
0.15
0.2
6.5
9
10
15
BUK4Y5-60H
ID / A
RDS(ON) / Ohm
5
4.5
VGS / V = 8
7
6
5.5
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0
2
4
6
8
10
12
0
20
40
60
80
100
BUK4Y5-60H
VGS / V
ID / A
Tj / C =
-40
150
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
November 1996
4
Rev 1.200
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