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參數(shù)資料
| 型號： | BUK475-200B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of BUK455-200A/B |
| 中文描述： | 7 A, 200 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 58K |
| 代理商： | BUK475-200B |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-200A/B
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 7 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
12
14
16
18
20
BUK455-200A
VDS / V
30
20
10
0
4
5
6
7
8
10
20
ID / A
VGS / V =
0
4
8
12
16
20
24
28
BUK455-200A
ID / A
gfs / S
15
10
5
0
0
4
8
12
16
20
24
28
BUK455-200A
ID / A
1.0
0.8
0.6
0.4
0.2
0
4
4.5
5
5.5
6
8
10
20
RDS(ON) / Ohm
VGS / V =
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
0
2
4
6
8
10
BUK455-200A
VGS / V
ID / A
28
24
20
16
12
8
4
0
Tj / C =
150
25
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
June 1996
4
Rev 1.200
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