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參數(shù)資料
| 型號： | BUK466-200A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 67K |
| 代理商： | BUK466-200A |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-200A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a plastic
envelope suitable for use in surface
mount applications.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and in
general purpose switching
applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
200
19
150
175
0.16
V
A
W
C
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
200
200
30
19
13
76
150
175
175
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.0
UNIT
K/W
minimum footprint,
FR4 board (see Fig. 18).
-
50
-
K/W
1
3
mb
2
d
g
s
February 1996
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK466-60A | PowerMOS transistor |
| BUK472-60A | PowerMOS transistor Isolated version of BUK452-60A/B |
| BUK472-60B | PowerMOS transistor Isolated version of BUK452-60A/B |
| BUK473-100A | PowerMOS transistor Isolated version of BUK453-100A/B |
| BUK473-100B | PowerMOS transistor Isolated version of BUK453-100A/B |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK466-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK466-60H | 制造商:NXP Semiconductors 功能描述: |
| BUK472-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK452-100A/B |
| BUK472-100B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK452-100A/B |
| BUK472-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK452-60A/B |
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