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參數(shù)資料
| 型號(hào)： | BUK473-100A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of BUK453-100A/B |
| 中文描述： | 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 60K |
| 代理商： | BUK473-100A |
Philips Semiconductors
Product specification
PowerMOS transistor
Isolated version of BUK453-100A/B
BUK473-100A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic
full-pack
deviceisintendedforuseinSwitched
Mode
Power
Supplies
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
envelope.
The
BUK473
-100A
100
9
25
0.16
-100B
100
8
25
0.2
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
V
A
W
(SMPS),
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
MAX.
100
100
30
UNIT
V
V
V
-100A
9
5.7
36
-100B
8
5
32
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
25
150
150
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
5
UNIT
K/W
R
th j-a
-
55
-
K/W
1 2 3
case
d
g
s
November 1996
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK473-100B | PowerMOS transistor Isolated version of BUK453-100A/B |
| BUK473-60B | PowerMOS transistor Isolated version of BUK453-60A/B |
| BUK473-60A | PowerMOS transistor Isolated version of BUK453-60A/B |
| BUK474-200A | PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔離版本的功率MOS場(chǎng)效應(yīng)管) |
| BUK474-200B | PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔離版本的功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK473-100B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK453-100A/B |
| BUK473-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK453-60A/B |
| BUK473-60B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK453-60A/B |
| BUK474-200A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK454-200A/B |
| BUK474-200B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK454-200A/B |
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