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參數(shù)資料
| 型號： | BUK474-200A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔離版本的功率MOS場效應(yīng)管) |
| 中文描述： | 5.3 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 79K |
| 代理商： | BUK474-200A |
Philips Semiconductors
Product specification
PowerMOS transistor
Isolated version of BUK454-200A/B
BUK474-200A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic
full-pack
deviceisintendedforuseinSwitched
Mode
Power
Supplies
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
envelope.
The
BUK474
-200A
200
5.3
25
0.4
-200B
200
4.7
25
0.5
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
V
A
W
(SMPS),
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
MAX.
200
200
30
UNIT
V
V
V
-200A
5.3
3.3
21
-200B
4.7
3.0
19
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
25
150
150
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
5
UNIT
K/W
R
th j-a
-
55
-
K/W
1 2 3
case
d
g
s
April 1998
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK474-200B | PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔離版本的功率MOS場效應(yīng)管) |
| BUK474-60H | PowerMOS transistor |
| BUK475-100A | PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔離版本的功率MOS場效應(yīng)管) |
| BUK475-100B | PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔離版本的功率MOS場效應(yīng)管) |
| BUK475-200A | PowerMOS transistor Isolated version of BUK455-200A/B |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK474-200B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK454-200A/B |
| BUK474-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK475-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-100A/B |
| BUK475-100B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-100A/B |
| BUK475-200A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-200A/B |
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