參數(shù)資料
型號: BUK200-50X
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: PowerMOS transistor TOPFET high side switch
中文描述: 10 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝: PLASTIC, TO-220, SOT-263-01, 5 PIN
文件頁數(shù): 8/13頁
文件大?。?/td> 125K
代理商: BUK200-50X
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK200-50X
Fig.16. Typical input threshold voltages.
V
IG
= f(T
j
); conditions V
BG
= 13 V, I
L
= 50 mA
Fig.17. Typical input clamping voltage.
V
IG
= f(T
j
); conditions I
I
= 200
μ
A, V
BG
= 13 V
Fig.18. Typical status characteristic, T
= 25 C.
I
S
= f(V
SG
); conditions V
IG
= V
BG
= 0 V
Fig.19. Typical status leakage current.
I
S
= f(T
j
); conditions V
SG
= 5 V, V
IG
= V
BG
= 0 V
Fig.20. Typical status low characteristic, T
= 25 C.
I
S
= f(V
SG
); conditions V
IG
= 5 V, V
BG
= 13 V, I
L
= 0 A
Fig.21. Typical status low voltage, V
= f(T
).
conditions I
S
= 50
μ
A, V
IG
= 5 V, V
BG
= 13 V, I
L
= 0 A
-60
-20
20
60
Tj / C
100
140
180
VIG / V
BUK200-50X
3.0
2.5
2.0
1.5
1.0
VIG(ON)
VIG(OFF)
-60
-20
20
60
Tj / C
100
140
180
IS
BUK200-50X
10 uA
1 uA
100 nA
10 nA
-60
-20
20
60
Tj / C
100
140
180
VIG / V
BUK200-50X
8.0
7.5
7.0
6.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
VSG / V
IS / uA
BUK200-50X
1000
800
600
400
200
0
0
2
4
6
8
10
VSG / V
IS / mA
BUK200-50X
20
15
10
5
0
-60
-20
20
60
Tj / C
100
140
180
VSG / V
BUK200-50X
1
0.8
0.6
0.4
0.2
0
April 1995
8
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK200-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK201-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK201-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK202-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
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