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參數(shù)資料
| 型號： | BUK200-50X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | PowerMOS transistor TOPFET high side switch |
| 中文描述： | 10 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263-01, 5 PIN |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 125K |
| 代理商： | BUK200-50X |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK200-50X
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
Battery to ground
Battery to load
Negative load to ground
V
BG
V
BL
-V
LG
I
G
= 1 mA
I
L
= I
G
= 1 mA
I
L
= 1 mA
50
50
12
55
55
17
65
65
21
V
V
V
Supply voltage
Operating range
1
battery to ground
-
V
BG
5
-
40
V
Currents
Nominal load current
2
Quiescent current
3
Operating current
4
Off-state load current
5
V
BG
= 13 V
V
BL
= 0.5 V; T
mb
= 85 C
V
IG
= 0 V; V
LG
= 0 V
V
IG
= 5 V; I
L
= 0 A
V
BL
= 13 V; V
IG
= 0 V
I
L
I
B
I
G
I
L
3.5
-
1.5
-
-
-
2
4
1
A
μ
A
mA
μ
A
0.1
2.2
0.1
Resistances
On-state resistance
6
On-state resistance
R
ON
R
ON
V
BG
= 13 V; I
L
= 5 A; t
p
= 300
μ
s
V
BG
= 5 V; I
L
= 1 A; t
p
= 300
μ
s
-
-
77
116
100
150
m
m
INPUT CHARACTERISTICS
T
mb
= 25 C; V
BG
= 13 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
I
V
IG
V
IG(ON)
V
IG(OFF)
V
IG
Input current
Input clamping voltage
Input turn-on threshold voltage
Input turn-off threshold voltage
Input turn-on hysteresis
V
IG
= 5 V
I
I
= 200
μ
A
35
6
-
1.5
-
60
7
2.1
1.7
0.4
100
8
2.4
-
-
μ
A
V
V
V
V
1
On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2
Defined as in ISO 10483-1.
3
This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4
This is the continuous current drawn from the battery with no load connected, but with the input high.
5
The measured current is in the load pin only.
6
The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
April 1995
3
Rev 1.000
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| BUK200-50Y | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關) |
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| BUK201-50Y | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關) |
| BUK202-50X | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK200-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK201-50X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK201-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK202-50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK202-50X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
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