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參數(shù)資料
| 型號(hào)： | BUK200-50X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor TOPFET high side switch |
| 中文描述： | 10 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263-01, 5 PIN |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 125K |
| 代理商： | BUK200-50X |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK200-50X
DYNAMIC CHARACTERISTICS
T
mb
= 25 C; V
BG
= 13 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Inductive load turn-off
Negative load voltage
1
-V
LG
V
IG
= 0 V; I
L
= 5 A; t
p
= 300
μ
s
15
20
25
V
Short circuit load protection
2
Response time
Load current prior to turn-off
V
IG
= 5 V; R
L
≤
10 m
V
IG
= 5 V
t < t
d sc
t
d sc
I
L
-
-
90
35
-
-
μ
s
A
Overload protection
3
Load current limiting
I
L(lim)
V
BL
= 8.5 V; t
p
= 300
μ
s
33
43
A
SWITCHING CHARACTERISTICS
T
mb
= 25 C, V
BG
= 13 V, for resistive load R
L
= 13
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
During turn-on
Delay time
Rate of rise of load voltage
to V
IG
= 5 V
to 10% V
L
t
d on
dV/dt
on
-
-
16
1
-
μ
s
V/
μ
s
2.5
t
on
Total switching time
to 90% V
L
-
40
-
μ
s
During turn-off
Delay time
Rate of fall of load voltage
Total switching time
to V
IG
= 0 V
to 90% V
L
t
d off
dV/dt
off
t
off
-
-
-
30
1.2
50
-
μ
s
V/
μ
s
μ
s
2.5
-
to 10% V
L
CAPACITANCES
T
mb
= 25 C; f = 1 MHz; V
IG
= 0 V
SYMBOL
PARAMETER
C
ig
Input capacitance
C
bl
Output capacitance
C
sg
Status capacitance
CONDITIONS
V
BG
= 13 V
V
BL
= V
BG
= 13 V
V
SG
= 5 V
MIN.
-
-
-
TYP.
15
330
11
MAX.
20
460
15
UNIT
pF
pF
pF
1
For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2
The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3
If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V
BL(TO)
, the device remains in
current limiting until the overtemperature protection operates.
April 1995
5
Rev 1.000
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| BUK200-50Y | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| BUK201-50X | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| BUK201-50Y | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| BUK202-50X | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| BUK202-50Y | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK200-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK201-50X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK201-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK202-50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK202-50X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
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