參數(shù)資料
型號(hào): BUK200-50X_1
廠商: NXP Semiconductors N.V.
英文描述: PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開(kāi)關(guān))
中文描述: PowerMOS晶體管TOPFET高邊開(kāi)關(guān)(功率馬鞍山晶體管TOPFET高邊開(kāi)關(guān))
文件頁(yè)數(shù): 9/13頁(yè)
文件大?。?/td> 125K
代理商: BUK200-50X_1
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK200-50X
Fig.22. Typical status clamping voltage, V
SG
= f(T
j
).
conditions I
S
= 100
μ
A, V
BG
= 13 V
Fig.23. Low load current detection threshold.
I
L(OC)
= f(T
j
); conditions V
IG
= 5 V; V
BG
= 13 V
Fig.24. Supply typical undervoltage thresholds.
V
BG(TO)
= f(T
j
); conditions V
IG
= 3 V; I
L
= 50 mA
Fig.25. Supply typical overvoltage thresholds.
V
BG(LP)
= f(T
j
); conditions V
IG
= 5 V; I
L
= 50 mA
Fig.26. Typical battery to ground clamping voltage.
V
BG
= f(T
j
); parameter I
G
Fig.27. Typical negative load clamping characteristic.
I
L
= f(V
LG
); conditions V
IG
= 0 V, t
p
= 300
μ
s, 25 C
-60
-20
20
60
Tj / C
100
140
180
VSG / V
BUK200-50X
8.0
7.5
7.0
6.5
-60
-20
20
60
Tj / C
100
140
180
VBG(LP) / V
BUK200-50X
46
45
44
43
42
on
off
-60
-20
20
60
100
140
180
Tj / C
BUK200-50X
500
400
300
200
100
0
IL(OC) / mA
typ.
max.
min.
-60
-20
20
60
Tj / C
100
140
180
VBG / V
BUK200-50X
65
60
55
50
10 uA
1 mA
IG =
-60
-20
20
60
Tj / C
100
140
180
VBG(TO) / V
BUK200-50X
5
4
3
2
1
0
on
off
-24
-20
-16
-12
-8
-4
0
VLG / V
IL / A
BUK200-50X
20
15
10
5
0
April 1995
9
Rev 1.000
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BUK200-50X PowerMOS transistor TOPFET high side switch
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BUK201-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開(kāi)關(guān))
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