參數(shù)資料
型號: BUK200-50X_1
廠商: NXP Semiconductors N.V.
英文描述: PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
中文描述: PowerMOS晶體管TOPFET高邊開關(guān)(功率馬鞍山晶體管TOPFET高邊開關(guān))
文件頁數(shù): 7/13頁
文件大?。?/td> 125K
代理商: BUK200-50X_1
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK200-50X
Fig.10. Typical supply characteristics, 25 C.
I
G
= f(V
BG
); parameter V
IG
Fig.11. Typical operating supply current.
I
G
= f(T
j
); parameter V
BG
; condition V
IG
= 5 V
Fig.12. Typical supply quiescent current.
I
B
= f(T
j
); condition V
BG
= 13 V, V
IG
= 0 V, V
LG
= 0 V
Fig.13. Typical off-state leakage current.
I
L
= f(T
j
); conditions: V
BL
= 13 V = V
BG
; V
IG
= 0 V.
Fig.14. Typical input characteristics, T
j
= 25 C.
I
I
= f(V
IG
); parameter V
BG
Fig.15. Typical input current, T
= 25 C.
I
I
= f(V
BG
); condition V
IG
= 5 V
0
20
40
60
VBG / V
IG / mA
BUK200-50X
5
4
3
2
1
0
OPERATING
QUIESCENT
CLAMPING
HIGH VOLTAGE
10
30
50
VIG = 3 V
VIG = 0 V
-60
-20
20
60
Tj / C
100
140
180
IL
BUK200-50X
100 uA
10 uA
1 uA
100 nA
10 nA
1 nA
-60
-20
20
60
Tj / C
100
140
180
IG / mA
BUK200-50X
3
2
1
0
VBG / V =
13
50
0
2
4
6
8
VIG / V
II / uA
BUK200-50X
200
150
100
50
0
VBG / V =
5
7
13
-60
-20
20
60
Tj / C
100
140
180
IB
BUK200-50X
100 uA
10 uA
1 uA
100 nA
10 nA
0
20
40
VBG / V
II / uA
BUK200-50X
100
80
60
40
20
0
10
30
50
April 1995
7
Rev 1.000
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BUK200-50X PowerMOS transistor TOPFET high side switch
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