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參數(shù)資料
| 型號： | BUK107-50DS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPEFT) |
| 中文描述： | 0.7 A, 50 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 75K |
| 代理商： | BUK107-50DS |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK107-50DS
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
I
D
I
I
I
IRM
P
D
T
stg
T
j
Continuous drain source voltage
1
Continuous drain current
2
Continuous input current
Non-repetitive peak input current
Total power dissipation
Storage temperature
Continuous junction temperature
-
-
clamping
t
p
≤
1 ms
T
amb
= 25 C
-
normal operation
3
-
-
-
-
-
50
V
A
self limiting
3
10
1.8
150
150
mA
mA
W
C
C
-55
-
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
DSM
Non-repetitive clamping energy
T
b
≤
25 C; I
DM
< I
D(lim)
;
inductive load
T
b
≤
75 C; I
DM
= 50 mA;
f = 250 Hz
-
100
mJ
E
DRM
Repetitive clamping energy
-
4
mJ
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from short circuit loads.
Overload protection operates by means of drain current limiting and activating the overtemperature protection.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DDP
Protected drain source supply voltage
I
I
= 1.5 mA
V
IS
= 6 V
-
-
35
16
V
V
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when there is an overload fault condition.
It remains latched off until reset by the input.
SYMBOL
PARAMETER
Overload protection
I
D(lim)
Drain current limiting
Overtemperature protection
T
j(TO)
Threshold junction temperature I
I
= 1.5 mA
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
I
= 1.5 mA
only in drain current limiting
0.7
1.1
1.5
A
100
130
160
C
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3 Not
in an overload condition with drain current limiting.
March 1997
2
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BUK107-50DST/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 500MA I(D) | SOT-223 |
| BUK107-50GL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK108-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK108-50DL /T3 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK108-50DL,118 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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