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參數(shù)資料
| 型號： | BU506 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 77K |
| 代理商： | BU506 |
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
V
BE
= 0
open base
65
1500
700
3
5
8
3
5
100
+150
150
V
V
A
A
A
A
A
W
°
C
°
C
see Fig.2
see Fig.2
T
mb
≤
25
°
C; see Fig.3
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
1.5
MAX.
1
1.3
2.2
0.5
1
UNIT
V
CEOsust
V
CEsat
V
BEsat
V
F
I
CES
collector-emitter sustaining voltage
collector-emitter saturation voltage
base-emitter saturation voltage
diode forward voltage (BU506D)
collector-emitter cut-off current
see Figs 4 and 5
I
C
= 3 A; I
B
= 1.33 A; see Fig.6
I
C
= 3 A; I
B
= 1.33 A; see Fig.7
I
F
= 3 A; see Fig.10
V
CE
= V
CESmax
; V
BE
= 0; note 1
V
CE
= V
CESmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 6 V; I
C
= 0
V
CE
= 5 V; I
C
= 100 mA;
see Fig.8
700
V
V
V
V
mA
mA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
6
13
10
30
mA
Switching times in horizontal deflection circuit
(see Fig.9)
t
s
storage time
I
CM
= 3 A; I
B(end)
= 1A;
L
B
= 12
μ
H
I
CM
= 3 A; I
B(end)
= 1A;
L
B
= 12
μ
H
6.5
μ
s
t
f
fall time
0.7
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU506D | Silicon diffused power transistors |
| BU5071 | |
| BU508AD | TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-218AC |
| BU508DR | TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-218VAR |
| BU508FI | TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-218 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU-506 | 制造商:Thomas & Betts 功能描述: |
| BU506-1 | 制造商:Thomas & Betts 功能描述:2 BUSHING,RGD/IMC,NM,INSUL,EA |
| BU506D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BU506DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BU506F | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
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