- 您現在的位置：買賣IC網 > PDF目錄369553 > BU4530AL (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor(硅擴散功率型晶體管) PDF資料下載
參數資料
| 型號： | BU4530AL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 16 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 58K |
| 代理商： | BU4530AL |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
35
MAX.
1.0
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
I
B
= 1 mA
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
BV
EBO
V
CEOsust
Base-emitter breakdown voltage
Collector-emitter breakdown voltage I
= 0 A;I
= 100 mA;
7.5
800
12.8
-
V
V
L = 25 mH
I
C
= 10 A; I
B
= 2.22 A
I
C
= 10 A; I
B
= 2.22 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 10 A; V
CE
= 5 V
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
3.0
1.01
-
8.5
V
V
0.83
-
4.8
0.92
12
6.6
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (32 kHz line
deflection dynamic test circuit).
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (90 kHz line
deflection dynamic test circuit).
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
Csat
= 9.0 A; I
B1
= 1.8 A; (I
B2
= -4.5 A)
TYP.
MAX.
UNIT
3.0
0.20
4.0
0.26
μ
s
μ
s
I
Csat
= 8 A;I
B1
= 1.6 A; (I
B2
= -4.0 A)
2
-
-
μ
s
μ
s
0.12
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
1
Measured with half sine-wave voltage (curve tracer).
April 1999
2
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| BU4530AW | Silicon Diffused Power Transistor(硅功率擴散晶體管) |
| BU4530AX | Silicon Diffused Power Transistor |
| BU4540AW | Silicon Diffused Power Transistor |
| BU4540 | Silicon Diffused Power Transistor |
| BU4540AL | Silicon Diffused Power Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BU4530AW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4530AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4538B | 功能描述:單穩(wěn)態(tài)多諧振蕩器 ONE-SHOT DUAL RoHS:否 制造商:Texas Instruments 每芯片元件:1 邏輯系列:LVC 邏輯類型:Monostable Multivibrator 封裝 / 箱體:SSOP-8 傳播延遲時間:18.6 ns 高電平輸出電流:- 32 mA 低電平輸出電流:32 mA 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大功率耗散: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Reel |
| BU4538B-E2 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High Voltage CMOS Logic ICs |
| BU4538BF | 制造商:ROHM 制造商全稱:Rohm 功能描述:High Voltage CMOS Logic ICs |
發(fā)布緊急采購，3分鐘左右您將得到回復。