參數(shù)資料
型號： BU4540
廠商： NXP Semiconductors N.V.
英文描述： Silicon Diffused Power Transistor
中文描述： 擴(kuò)散硅功率晶體管
文件頁數(shù)： 1/4頁
文件大?。?/td> 20K
代理商： BU4540
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4540AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
CONDITIONS
V
BE
= 0
TYP.
-
-
-
-
-
-
16
8
t.b.f
t.b.f
MAX.
1500
800
25
40
125
3.0
-
-
t.b.f
t.b.f
UNIT
V
V
A
A
W
V
A
A
μ
s
μ
s
T
mb
≤
25 C
I
B
= 4 A
f = 32kHz
f = 110kHz
I
Csat
= 16 A; f = 32kHz
I
Csat
= 8 A; f = 110kHz
t
f
Storage time
PINNING - SOT430
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
heat
sink
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
25
40
10
15
200
125
150
150
UNIT
V
V
A
A
A
A
mA
W
C
C
average over any 20 ms period
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
35
MAX.
1.0
-
UNIT
K/W
K/W
1
2
3
b
c
e
January 1998
1
Rev 1.000
相關(guān)PDF資料
PDF描述
BU4540AL Silicon Diffused Power Transistor
BU4550AL Silicon Diffused Power Transistor
BU505DF Silicon diffused power transistors
BU505F Silicon diffused power transistors
BU505 Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BU4540AL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU4540AW 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU4550AL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU4551B 功能描述:多路器開關(guān) IC QUAD MUX/DEMUX RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開關(guān)數(shù)量:4 開啟電阻（最大值）:7 Ohms 開啟時間（最大值）: 關(guān)閉時間（最大值）: 傳播延遲時間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16
BU4551B/BF/BFV 制造商:ROHM 制造商全稱:Rohm 功能描述:Standard LSIs
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