參數(shù)資料
型號: BU2527DF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 12 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁數(shù): 4/7頁
文件大?。?/td> 81K
代理商: BU2527DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527DF
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.9. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.10. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.11. Typical turn-off losses.T
= 85C
Eoff = f (I
B
); parameter I
C
; f = 64 kHz
Fig.12. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85C; f = 64 kHz
0.1
1
10
IC / A
VBESAT / V
BU2525AF
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
0.1
1
10
IB / A
VCESAT / V
BU2525AF
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
0.1
10
IC / A
VCESAT / V
BU2525AF
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
1
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
IB / A
100
10
1
Poff / W
BU2527AF
IC =
6A
5A
0
1
2
3
4
IB / A
VBESAT / V
BU2525AF
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
IB / A
4
3.5
3
2.5
2
1.5
1
0.5
0
ts, tf / us
BU2527AF
IC =
6A
5A
September 1997
4
Rev 1.200
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