參數(shù)資料
型號(hào)： BU2530AL
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon Diffused Power Transistor
中文描述： 16 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, SOT-430, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 65K
代理商： BU2530AL
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0
TYP.
-
-
-
-
-
-
9
3.5
MAX.
1500
800
16
40
125
5.0
-
4.5
UNIT
V
V
A
A
W
V
A
μ
s
T
mb
≤
25 C
I
C
B
= 1.64 A
I
Csat
= 9.0 A; I
B(end)
= 1.3 A
PINNING - SOT430
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
heat
sink
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
16
40
10
15
200
10
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
35
MAX.
1.0
-
UNIT
K/W
K/W
1
2
3
b
c
e
1
Turn-off current.
September 1997
1
Rev 1.200
相關(guān)PDF資料
PDF描述
BU2530AW Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU2532AL Silicon Diffused Power Transistor
BU2532AW Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU2614F Consumer IC
BU2615F Consumer IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BU2530AW 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU2532AL 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
BU2532AW 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN TO-247
BU2532AW 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN TO-247
BU2532AW/B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TRANSISTOR POWER TO-247
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*