參數(shù)資料
型號： BU2523DF
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon Diffused Power Transistor
中文描述： 11 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, SOT-199, 3 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 67K
代理商： BU2523DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 6.0 V; I
C
= 0 A
I
B
= 600 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
V
= 7.5 V
I
C
= 5.5 A; I
B
= 1.1 A
I
C
= 5.5 A; I
B
= 1.1 A
I
C
= 1.0 A; V
CE
= 5 V
I
C
= 5.5 A; V
CE
= 5 V
I
F
= 5.5 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
80
7.5
800
130
13.5
-
170
-
-
mA
V
V
R
be
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
-
5
-
46
-
-
12
7.5
-
-
V
V
5.0
1.0
-
10.8
2.2
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (64 kHz line
deflection circuit)
CONDITIONS
I
Csat
= 5.5 A; L
C
= 200
μ
H; C
fb
= 4 nF;
V
CC
= 145 V; I
B(end)
= 0.56 A;
L
B
= 0.4
μ
H; -V
BB
= -4 V;
-I
BM
= 3.3 A
TYP.
MAX.
UNIT
t
s
t
f
V
fr
Turn-off storage time
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
1.5
0.15
16.5
2
μ
s
μ
s
V
0.3
-
I
F
= 5.5 A; dI
F
/dt = 50 A/
μ
s
t
fr
V
F
= 5 V
375
-
ns
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
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