參數(shù)資料
型號(hào): BU2523DF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 11 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 67K
代理商: BU2523DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.5
-
0.15
MAX.
1500
800
11
29
45
5.0
-
2.2
0.3
UNIT
V
V
A
A
W
V
A
V
μ
s
T
hs
25 C
I
= 5.5 A; I
B
= 1.1 A
f = 64 kHz
I
F
= 5.5 A
I
Csat
= 5.5 A; f = 64 kHz
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
175
7
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
2
3
case
b
c
e
Rbe
1
Turn-off current.
September 1997
1
Rev 1.200
相關(guān)PDF資料
PDF描述
BU2523DX Silicon Diffused Power Transistor
BU2525AF Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU2525AW INDUCTOR 1UH LOW PROFILE HIGH CURRENT
BU2525AX Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU2525A High Current Inductor; Inductor Type:High Frequency; Inductance:680nH; Inductance Tolerance:+/- 20 %; Current Rating:15.5A; Series:IHLP-2525CZ; Package/Case:PCB Surface Mount; Mounting Type:Surface Mount; Packaging:Tape And Reel RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BU2523DX 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU2525A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU2525AF 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
BU2525AF/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR ISOLATED SOT199
BU2525AW 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN TO-247