參數(shù)資料
型號(hào)： BU2523DX
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： Silicon Diffused Power Transistor
中文描述： 11 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, SOT-399, 3 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大小： 69K
代理商： BU2523DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.5
-
0.15
MAX.
1500
800
11
29
45
5.0
-
2.2
0.3
UNIT
V
V
A
A
W
V
A
V
μ
s
T
hs
≤
25 C
I
= 5.5 A; I
B
= 1.1 A
f = 64 kHz
I
F
= 5.5 A
I
Csat
= 5.5 A; f = 64 kHz
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
175
7
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
case
1 2 3
b
c
e
Rbe
1
Turn-off current.
September 1997
1
Rev 1.200
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