參數(shù)資料
型號(hào): BU2523AX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 11 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-399, 3 PIN
文件頁數(shù): 3/6頁
文件大小: 66K
代理商: BU2523AX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AX
Fig.3. Switching times test circuit
Fig.4. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical losses.
P
TOT
= f (I
B
); I
C
=5.5 A; f = 64 kHz
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
1
10
100
0.01
0.1
1
10
Ths = 25 C
Ths = 85 C
IC/IB = 10
IC/IB = 5
VCEsat / V
BU2523AF/X
IC / A
BU2523AF/X
0.01
0.1
1
10
100
1
10
100
VCE = 1 V
Ths = 25 C
Ths = 85 C
hFE
IC / A
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
VBEsat / V
BU2523AF/X
IB / A
IC = 6 A
IC = 4.5 A
Ths = 25 C
Ths = 85 C
BU2523AF/X
0.01
0.1
1
10
100
1
10
100
VCE = 5 V
Ths = 25 C
Ths = 85 C
hFE
IC / A
BU2523AF/DF/AX/DX
0
0.5
1
1.5
2
1
10
100
PTOT / W
IB / A
Ths = 25 C
Ths = 85 C
September 1997
3
Rev 1.100
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