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參數(shù)資料
| 型號(hào)： | BT152-800R |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCR |
| 封裝： | BT152-800R<SOT78 (SOT78)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 521K |
| 代理商： | BT152-800R |
BT152-800R
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 9 June 2011
6 of 12
NXP Semiconductors
BT152-800R
SCR
6.
Characteristics
Table 6.
Symbol
Static characteristics
I
GT
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
see
Figure 7
V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C;
see
Figure 8
V
D
= 12 V; T
j
= 25 °C; see
Figure 9
I
T
= 40 A; T
j
= 25 °C; see
Figure 10
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
see
Figure 11
V
D
= 800 V; I
T
= 0.1 A; T
j
= 125 °C
V
D
= 800 V; T
j
= 125 °C
T
j
= 125 °C; V
R
= 800 V
-
3
32
mA
I
L
latching current
-
25
80
mA
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
-
-
-
15
1.4
0.6
60
1.75
1.5
mA
V
V
0.25
-
-
0.4
0.2
0.2
-
1
1
V
mA
mA
I
D
I
R
Dynamic characteristics
dV
D
/dt
off-state current
reverse current
rate of rise of off-state voltage
V
DM
= 536 V; T
j
= 125 °C; exponential
waveform; gate open circuit;
see
Figure 12
I
TM
= 40 A; V
D
= 800 V; I
G
= 100 mA;
dI
G
/dt = 5 A/μs
V
DM
= 536 V; T
j
= 125 °C; I
TM
= 50 A;
V
R
= 25 V; (dI
T
/dt)
M
= 30 A/μs;
dV
D
/dt = 50 V/μs; R
GK
= 100
200
300
-
V/μs
t
gt
gate-controlled turn-on time
-
2
-
μs
t
q
commutated turn-off time
-
70
-
μs
Fig 7.
Normalized gate trigger current as a function of
junction temperature
Fig 8.
Normalized latching current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
003aag279
1
2
3
0
I
GT
I
GT(25°C)
T
j
(°C)
-50
150
100
0
50
003aag280
1
2
3
0
I
L
I
L(25°C)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT152-800R,127 | 功能描述:SCR RAIL SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT152-800R | 制造商:NXP Semiconductors 功能描述:THYRISTOR 13A 800V TO-220 |
| BT152-800R/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR 20A 800V |
| BT152-800R_11 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:High thermal cycling performance Very high current surge capability |
| BT152-800R127 | 制造商:NXP Semiconductors 功能描述:Thyristor |
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