參數(shù)資料
型號(hào): BT152-800R
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: SCR
封裝: BT152-800R<SOT78 (SOT78)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 521K
代理商: BT152-800R
BT152-800R
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 9 June 2011
2 of 12
NXP Semiconductors
BT152-800R
SCR
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
K
cathode
A
anode
G
gate
A
mounting base; connected to anode
Simplified outline
Graphic symbol
SOT78 (TO-220AB)
1 2
mb
3
sym037
A
K
G
Table 3.
Type number
Ordering information
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
BT152-800R
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
Conditions
Min
-
-
-
-
-
Max
800
800
13
20
200
Unit
V
V
A
A
A
half sine wave; T
mb
103 °C; see
Figure 3
half sine wave; see
Figure 1
; see
Figure 2
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
see
Figure 4
; see
Figure 5
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
t
p
= 10 ms; sine-wave pulse
I
T
= 50 A; I
G
= 200 mA; dI
G
/dt = 200 mA/μs
-
-
-
-
-
-
-
-40
-
220
200
200
5
5
20
0.5
150
125
A
A
2
s
A/μs
A
V
W
W
°C
°C
I
2
t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
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