參數(shù)資料
型號(hào): BT152-800R
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: SCR
封裝: BT152-800R<SOT78 (SOT78)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁數(shù): 1/12頁
文件大小: 521K
代理商: BT152-800R
1.
Product profile
1.1 General description
Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package
intended for use in applications requiring very high inrush current capability and high
thermal cycling performance.
1.2 Features and benefits
High thermal cycling performance
High voltage capability
Planar passivated for voltage
ruggedness and reliability
Very high current surge capability
1.3 Applications
Ignition circuits
Motor control
Protection circuits e.g. SMPS inrush
current
Voltage regulation
1.4 Quick reference data
Table 1.
Symbol
V
DRM
BT152-800R
SCR
Rev. 2 — 9 June 2011
Product data sheet
T-2A
Quick reference data
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
non-repetitive peak
on-state current
Conditions
Min
-
Typ
-
Max
800
Unit
V
V
RRM
-
-
800
V
I
TSM
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; see
Figure 4
;
see
Figure 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
half sine wave; T
mb
103 °C;
see
Figure 3
half sine wave; see
Figure 1
;
see
Figure 2
-
-
200
A
-
-
220
A
I
T(AV)
average on-state current
-
-
13
A
I
T(RMS)
RMS on-state current
-
-
20
A
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A;
T
j
= 25 °C; see
Figure 7
-
3
32
mA
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