參數(shù)資料
型號(hào): BT152-500RT
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 晶閘管
英文描述: SCR
中文描述: 20 A, 500 V, SCR, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 196K
代理商: BT152-500RT
BT152-500RT
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 9 June 2011
6 of 12
NXP Semiconductors
BT152-500RT
SCR
6.
Characteristics
Table 6.
Symbol
Static characteristics
I
GT
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
gate trigger current
V
D
= 12 V; I
T
= 100 mA; T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
G
= 100 mA; T
j
= 25 °C;
see
Figure 8
T
j
= 25 °C; see
Figure 9
I
T
= 40 A; T
j
= 25 °C; see
Figure 10
V
D
= 12 V; I
T
= 100 mA; T
j
= 25 °C; see
Figure 11
V
D
= 500 V; I
T
= 100 mA; T
j
= 125 °C;
see
Figure 11
V
D
= 500 V; T
j
= 125 °C
T
j
= 125 °C; V
R
500 V
-
3
32
mA
I
L
latching current
-
25
80
mA
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
-
-
-
15
1.4
0.6
60
1.75
1.5
mA
V
V
0.25
0.4
-
V
I
D
I
R
Dynamic characteristics
dV
D
/dt
off-state current
reverse current
-
-
0.2
0.2
1
1
mA
mA
rate of rise of off-state
voltage
V
DM
= 335 V; T
j
= 125 °C; exponential
waveform; gate open circuit;
see
Figure 12
I
TM
= 40 A; V
D
= 500 V; I
G
= 100 mA;
dI
G
/dt = 5 A/μs
V
DM
= 335 V; T
j
= 125 °C; I
TM
= 20 A;
V
R
= 25 V; (dI
T
/dt)
M
= 30 A/μs;
dV
D
/dt = 50 V/μs; R
GK
= 100
200
300
-
V/μs
t
gt
gate-controlled turn-on time
-
2
-
μs
t
q
commutated turn-off time
-
70
-
μs
Fig 7.
Normalized gate trigger current as a function of
junction temperature
Fig 8.
Normalized latching current as a function of
junction temperature
T
j
(
°
C)
50
150
100
0
50
003aab824
1
2
3
0
I
GT
I
GT(25
°
C)
T
j
(
°
C)
50
150
100
0
50
003aab825
1
2
3
0
I
L
I
L(25
°
C)
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