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參數資料
| 型號： | BT152-500RT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | SCR |
| 中文描述： | 20 A, 500 V, SCR, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 2/12頁 |
| 文件大小： | 196K |
| 代理商： | BT152-500RT |
BT152-500RT
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 9 June 2011
2 of 12
NXP Semiconductors
BT152-500RT
SCR
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
K
cathode
A
anode
G
gate
A
mounting base; connected to anode
Simplified outline
Graphic symbol
SOT78 (TO-220AB)
1 2
mb
3
sym037
A
K
G
Table 3.
Type number
Ordering information
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
BT152-500RT
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
Conditions
Min
-
-
-
-
-
-
Max
500
500
13
20
220
200
Unit
V
V
A
A
A
A
half sine wave; T
mb
≤
122 °C; see
Figure 3
half sine wave; see
Figure 1
; see
Figure 2
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
see
Figure 4
; see
Figure 5
t
p
= 10 ms; sine-wave pulse
I
T
= 50 A; I
G
= 200 mA; dI
G
/dt = 200 mA/μs
I
2
t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
-
-
-
-
-
-
-40
-
200
200
5
5
20
1
150
150
A
2
s
A/μs
A
V
W
W
°C
°C
over any 20 ms period
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相關代理商/技術參數 |
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| BT152-500RT,127 | 功能描述:SCR THYRISTOR 20A 500V RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT152-500RT_11 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:High junction temperature capability Very high current surge capability |
| BT152-500RT127 | 制造商:NXP Semiconductors 功能描述:THYRISTOR 20A 500V TO-220AB |
| BT152-600 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon Controlled Rectifier |
| BT152-600R | 制造商:NXP Semiconductors 功能描述:Thyristor SCR 650V 220A 3-Pin (3+Tab) TO-220AB Tube Bulk 制造商:NXP Semiconductors 功能描述:THYRISTOR TUBE 50 制造商:NXP Semiconductors 功能描述:THYRISTOR 13A 600V TO-220 制造商:NXP Semiconductors 功能描述:THYRISTOR, 13A, 600V, TO-220 |
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