參數(shù)資料
型號(hào)： BSS76
廠商： SEMELAB LTD
元件分類(lèi)： 功率晶體管
英文描述： HIGH VOLTAGE PNP SILICON TRANSISTOR
中文描述： 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
封裝： HERMETIC SEALED, METAL, TO-18, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 27K
代理商： BSS76
LAB
MECHANICAL DATA
Dimensions in mm (inches)
P
Document Number 5747
Issue 1
BSS76
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
HIGH VOLTAGE
PNP SILICON
TRANSISTOR
V
CBO
V
CEO
V
EBO
I
C
P
D
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
T
C
= 25°C
Derate above 25°C
P
D
Total Device Dissipation
T
J
, T
STG
R
θ
JC
Operating Junction & Storage Temperature Range
Thermal Resistance, Junction – Case
-300V
-300V
-5V
-0.5A
0.5W
2.86mW/°C
2.5W
14.3mW/°C
-65 to 200°C
70°C/W
TO–18 (TO-206AA) PACKAGE
PIN 1 – Emitter
PIN 2 – Base
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise stated)
PIN 3 – Collector
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5
4
1
m
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
FEATURES
Hermetic Metal Package
Screening Options Available
APPLICATIONS:
All Semelab hermetically sealed prod-
ucts can be processed in accordance
with the requirements of BS, CECC
and JAN specifications
相關(guān)PDF資料
PDF描述
BSS8402DW-7 COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BST16 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSS7728 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal-Transistor
BSS7728N 功能描述:MOSFET N-CH 60V 200MA SOT-23 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SIPMOS® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
BSS7728N H6327 功能描述:MOSFET N-KANAL SMALL SIGNAL MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSS7728N L6327 功能描述:MOSFET N-CH 60V 0.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSS7728N L7980 功能描述:MOSFET SIPMOS Sm-Signal Transistor RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*