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參數(shù)資料
| 型號： | BSS52 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Darlington transistors |
| 中文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | METAL, TO-39, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BSS52 |
1997 Sep 03
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
I
CES
collector cut-off current
BSS50
BSS51
BSS52
emitter cut-off current
DC current gain
V
BE
= 0; V
CE
= 45 V
V
BE
= 0; V
CE
= 60 V
V
BE
= 0; V
CE
= 80 V
I
C
= 0; V
EB
= 4 V
V
CE
= 10 V
I
C
= 150 mA
I
C
= 500 mA
50
50
50
50
nA
nA
nA
nA
I
EBO
h
FE
1000
2000
1.3
1.3
V
CEsat
collector-emitter saturation voltage I
C
= 500 mA; I
B
= 0.5 mA
V
V
I
C
= 500 mA; I
B
= 0.5 mA; T
j
= 200
°
C
V
CEsat
collector-emitter saturation voltage
BSS51
I
C
= 1 A; I
B
= 1 mA
I
C
= 1 A; I
B
= 1 mA; T
j
= 200
°
C
1.6
2.3
V
V
V
CEsat
collector-emitter saturation voltage
BSS50; BSS52
I
C
= 1 A; I
B
= 4 mA
I
C
= 1 A; I
B
= 4 mA; T
j
= 200
°
C
I
C
= 500 mA; I
B
= 0.5 mA
1.6
1.6
1.9
V
V
V
V
BEsat
V
BEsat
base-emitter saturation voltage
base-emitter saturation voltage
BSS51
BSS50; BSS52
base-emitter on-state voltage
I
C
= 1 A; I
B
= 1 mA
I
C
= 1 A; I
B
= 4 mA
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 5 V; f = 100 MHz
1.3
1.4
200
2.2
2.2
1.65
1.75
V
V
V
V
MHz
V
BEon
f
T
transition frequency
Switching times (between 10% and 90% levels)
t
on
turn-on time
I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
=
0.5 mA
I
Con
= 1 A; I
Bon
= 1 mA; I
Boff
=
1 mA
I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
=
0.5 mA
I
Con
= 1 A; I
Bon
= 1 mA; I
Boff
=
1 mA
0.5
μ
s
0.4
1.3
μ
s
μ
s
t
off
turn-off time
1.5
μ
s
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