參數(shù)資料
型號(hào): BSS52
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: NPN Darlington transistors
中文描述: 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝: METAL, TO-39, 3 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 52K
代理商: BSS52
1997 Sep 03
2
Philips Semiconductors
Product specification
NPN Darlington transistors
BSS50; BSS51; BSS52
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V)
Integrated diode and resistor.
APPLICATIONS
Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a TO-39 metal package.
PNP complements: BSS61 and BSS62.
PINNING
PIN
DESCRIPTION
1
2
3
emitter
base
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
MAM311
2
3
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
BSS50
BSS51
BSS52
collector-emitter voltage
BSS50
BSS51
BSS52
collector current
total power dissipation
open emitter
60
80
90
V
V
V
V
CES
V
BE
= 0
2000
200
45
60
80
1
0.8
5
V
V
V
A
W
W
I
C
P
tot
T
amb
25
°
C
T
case
25
°
C
I
C
= 500 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 5 V; f = 100 MHz
h
FE
f
T
DC current gain
transition frequency
MHz
相關(guān)PDF資料
PDF描述
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BSS62 PNP Darlington transistors
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