參數(shù)資料
型號(hào): BSR18A
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: PNP switching transistor
中文描述: 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 4/8頁
文件大小: 62K
代理商: BSR18A
1997 May 28
4
Philips Semiconductors
Product specification
PNP switching transistor
BSR18A
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
300
μ
s;
δ ≤
0.01.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
50
UNIT
I
CBO
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
I
E
= 0; V
CB
=
30 V
I
C
= 0; V
EB
=
6 V
V
CE
=
1 V; note 1; see Fig.2
I
C
=
0.1 mA
I
C
=
1 mA
I
C
=
10 mA
I
C
=
50 mA
I
C
=
100 mA
I
C
=
10 mA; I
B
=
1 mA; note 1
I
C
=
50 mA; I
B
=
5 mA; note 1
I
C
=
10 mA; I
B
=
1 mA; note 1
I
C
=
50 mA; I
B
=
5 mA; note 1
I
E
= i
e
= 0; V
CB
=
5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
500 mV; f = 1 MHz
I
C
=
10 mA; V
CE
=
20 V; f = 100 MHz
I
C
=
100
μ
A; V
CE
=
5 V; R
S
= 1 k
;
f = 10 Hz to 15.7 kHz
nA
nA
60
80
100
60
30
650
250
300
200
200
850
950
4.5
10
4
V
CEsat
collector-emitter saturation voltage
mV
mV
mV
mV
pF
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
10 mA; I
Bon
=
1 mA; I
Boff
= 1 mA
65
35
35
300
225
75
ns
ns
ns
ns
ns
ns
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