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參數(shù)資料
| 型號： | BSP304A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-channel enhancement mode vertical D-MOS transistors(P溝道增強型垂直D-MOS晶體管) |
| 中文描述： | 170 mA, 300 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BSP304A |
1995 Apr 07
5
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
Fig.6
Capacitance as a function of drain source
voltage; typical values.
V
GS
= 0.
T
j
= 25
°
C.
f = 1 MHz.
handbook, halfpage
C
(pF)
0
60
80
40
20
0
10
20
30
MLC688
VDS
Coss
Crss
Ciss
Fig.7 Typical output characteristics.
T
j
= 25
°
C.
handbook, halfpage
ID
(mA)
0
2
4
10
VDS
600
200
0
400
MLD139
6
12
8
P = 1 W
VGS
7 V
6 V
5 V
4 V
3.5 V
3 V
Fig.8 Typical transfer characteristics.
V
DS
=
25 V.
T
j
= 25
°
C.
handbook, halfpage
ID
(mA)
0
2
4
10
600
200
0
400
MLC689
6
VGS
8
Fig.9
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
I
D
=
170 mA.
T
j
= 25
°
C.
handbook, halfpage
RDSon
(
)
0
20
40
60
0
2
4
6
8
10
VGS
MLC691
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSP304A AMO | 功能描述:MOSFET VDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSP304A,126 | 功能描述:MOSFET VDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSP304T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 300V V(BR)DSS | 170MA I(D) | TO-92VAR |
| BSP308 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?Small Signal MOSFET.30V. SOT-223. RDSon = 75mOhm. 4.7A. LL ? |
| BSP30T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-223 |
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