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參數資料
| 型號： | BSP304A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-channel enhancement mode vertical D-MOS transistors(P溝道增強型垂直D-MOS晶體管) |
| 中文描述： | 170 mA, 300 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件頁數： | 3/9頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BSP304A |
1995 Apr 07
3
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the
“Limiting values”
and
“Thermal characteristics”
1.
Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum 1 cm
2
.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
300
±
20
170
0.75
1
+150
150
UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
65
V
V
mA
A
W
°
C
°
C
open drain
up to T
amb
= 25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
300
1.7
100
TYP.
60
15
5
MAX.
2.55
100
±
100
17
90
30
15
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
y
fs
C
iss
C
oss
C
rss
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
V
GS
= 0; I
D
=
10
μ
A
V
DS
= V
GS
; I
D
=
1 mA
V
GS
= 0; V
DS
=
240 V
V
GS
=
±
20 V; V
DS
= 0
V
GS
=
10 V; I
D
=
170 mA
V
DS
=
25 V; I
D
=
170 mA
V
GS
= 0; V
DS
=
25 V; f = 1 MHz
V
GS
= 0; V
DS
=
25 V; f = 1 MHz
V
GS
= 0; V
DS
=
20 V; f = 1 MHz
V
V
nA
nA
mS
pF
pF
pF
Switching times (see Figs
2
and
3
)
t
on
turn-on time
V
GS
= 0 to
10 V; V
DD
=
50 V;
I
D
=
250 mA
V
GS
=
10 to 0 V; V
DD
=
50 V;
I
D
=
250 mA
5
10
ns
t
off
turn-off time
15
30
ns
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相關代理商/技術參數 |
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| BSP304A AMO | 功能描述:MOSFET VDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSP304A,126 | 功能描述:MOSFET VDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSP304T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 300V V(BR)DSS | 170MA I(D) | TO-92VAR |
| BSP308 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?Small Signal MOSFET.30V. SOT-223. RDSon = 75mOhm. 4.7A. LL ? |
| BSP30T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-223 |
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